abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v rsm = 2800 v i f(av)m = 5380 a i f(rms) = 8450 a i fsm = 6510 3 a v f0 = 0.77 v r f = 0.082 m w rectifier diode 5sdd 51l2800 doc. no. 5sya1103-01 feb. 05 patented free-floating silicon technology very low on-state losses high average and surge current. blocking maximum rated values 1) parameter symbol conditions value unit repetitive peak reverse voltage v rrm f = 50 hz, t p = 10ms, t j = 175c 2000 v non-repetitive peak reverse voltage v rsm f = 5 hz, t p = 10ms, t j = 175c 2800 v non-repetitive peak reverse voltage v rsm f = 50 hz, t p 5ms, t j = ...175c 3000 v characteristic values parameter symbol conditions min typ max unit max. (reverse) leakage current i rrm v rrm , tj = 175c 400 ma t vj = -40c reduces v rsm and v rrm by 5%. mechanical data maximum rated values 1) parameter symbol conditions min typ max unit mounting force f m 63 70 77 kn acceleration a device unclamped 50 m/s 2 acceleration a device clamped 100 m/s 2 characteristic values parameter symbol conditions min typ max unit weight m 1.45 kg housing thickness h f m = 70 kn, t a = 25 c 25.7 26.3 mm surface creepage distance d s 35 mm air strike distance d a 14 mm 1) maximum rated values indicate limits beyond which damage to the device may occur
5sdd 51l2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1103-01 feb. 05 page 2 of 6 on-state maximum rated values 1) parameter symbol conditions min typ max unit max. average on-state current i f(av)m 50 hz, half sine wave, t c = 85 c 5380 a max. rms on-state current i f(rms) 8450 a max. peak non-repetitive surge current i fsm 6510 3 a limiting load integral i 2 t t p = 10 ms, t j = 175c, v r = 0 v 21.1310 6 a 2 s max. peak non-repetitive surge current i fsm 7010 3 a limiting load integral i 2 t t p = 8.3 ms, t j = 175c, v r = 0 v 20.3410 6 a 2 s characteristic values parameter symbol conditions min typ max unit on-state voltage v f i f = 5000 a, t j = 175c 1.18 v threshold voltage v (t0) 0.77 v slope resistance r t t j = 175c i t = 2500...7500 a 0.082 m w switching characteristic values parameter symbol conditions min typ max unit recovery charge q rr di f /dt = -10 a/s, v r = 200 v i frm = 4000 a, t j = 175c 7000 m as
5sdd 51l2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1103-01 feb. 05 page 3 of 6 thermal maximum rated values 1) parameter symbol conditions min typ max unit operating junction temperature range t vj 175 c storage temperature range t stg -40 150 c characteristic values parameter symbol conditions min typ max unit thermal resistance junction to case r th(j-c) double-side cooled f m = 63...77 kn 8 k/kw r th(j-c)a anode-side cooled f m = 63...77 kn 16 k/kw r th(j-c)c cathode-side cooled f m = 63...77 kn 16 k/kw thermal resistance case to heatsink r th(c-h) double-side cooled f m = 63...77 kn 3 k/kw r th(c-h) single-side cooled f m = 63...77 kn 6 k/kw analytical function for transient thermal impedance: ) e - (1 r = (t) z n 1 i t/ - i th c) - th(j ? = i t i 1 2 3 4 r th i (k/kw) 5.364 1.586 0.638 0.412 t i (s) 0.5339 0.0684 0.0067 0.0013 fig. 1 transient thermal impedance junction-to- case.
5sdd 51l2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1103-01 feb. 05 page 4 of 6 fig. 2 on-state characteristics. fig. 3 on-state characteristics. fig. 4 on-state power losses vs average on-state current. fig. 5 max. permissible case temperature vs average on-state current.
5sdd 51l2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1103-01 feb. 05 page 5 of 6 fig. 6 surge on-state current vs. pulse length. half- sine wave. fig. 7 surge on-state current vs. number of pulses. half-sine wave, 10 ms, 50hz. fig. 8 recovery charge vs. decay rate of on-state current.
5sdd 51l2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd doc. no. 5sya1103-01 feb. 05 semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abb.com/semiconductors fig. 9 outline drawing. all dimensions are in millimeters and represent nominal values unless stated otherwise. related application notes: doc. nr titel 5sya 2020 design of rc-snubbers for phase control applications 5sya 2029 designing large rectifiers with high power diodes 5sya 2036 recommendations regarding mechanical clamping of press pack high power semiconductors please refer to http://www.abb.com/semiconductors for actual versions.
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